Low threshold 1.3 μm strained-layer Al x Ga y In 1− x − y As quantum well lasers

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Abstract
Low threshold 1.3 μm lasers using compressive as well as tensile-strained single AlxGayIn1−x−yAs quantum wells (100 and 188 A/cm2, respectively), are demonstrated. Low threshold currents of 2 mA at 25°C and 14 mA at 100°C are achieved for 3.5 μm wide ridge waveguide lasers using the compressive-strained single quantum well.