1/f noise interpretation of the effect of gate oxide nitridation and reoxidation in dielectric traps

This publication has 18 references indexed in Scilit:

• A 1/f noise technique to extract the oxide trap density near the conduction band edge of silicon
  IEEE Transactions on Electron Devices, 1989
• Optimization of low-pressure nitridation/reoxidation of SiO/sub 2/ for scaled MOS devices
  IEEE Transactions on Electron Devices, 1988
• Theory and experiment on the 1/fγnoise inp-channel metal-oxide-semiconductor field-effect transistors at low drain bias
  Physical Review B, 1986
• MOS Electrical characteristics of low pressure re-oxidized nitrided-oxide
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1986
• Study of 1/f noise in N-MOSFET's: Linear region
  IEEE Transactions on Electron Devices, 1985
• High-field electron capture and emission in nitrided oxides
  Journal of Applied Physics, 1985
• Theory and experiments on surface 1/f noise
  IEEE Transactions on Electron Devices, 1972
• Low frequency noise in MOS transistors—I Theory
  Solid-State Electronics, 1968
• Theory of low-frequency generation noise in junction-gate field-effect transistors
  Proceedings of the IEEE, 1964
• The Statistics of Charge Carrier Fluctuations in Semiconductors
  Proceedings of the Physical Society. Section B, 1956