X-ray photoelectron and Auger electron spectroscopy study of ultraviolet/ozone oxidized, P2S5/(NH4)2S treated GaAs(100) surfaces

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Abstract
In this report we discuss the results of a study undertaken to investigate the composition and thermal stability of ultraviolet/ozone oxidized, P2S5/(NH4)2S treated GaAs(100) surfaces. In particular, we have used x-ray photoelectron spectroscopy and Auger electron spectroscopy to probe the oxide and interface at room temperature and as a function of annealing temperature. The room temperature data indicate that S is buried between the oxide overlayer and the GaAs substrate. This oxide contains a variety of As and Ga bonding configurations which, after moderate annealing, are transformed into thermally more stable phases, such as As2O3 and Ga2O3 . Complete desorption of the oxide occurs after annealing at 600 °C. Annealing the as-oxidized surface to high temperatures also has a profound effect on the S. Heating the sample to 495 °C causes some S to diffuse towards the oxide surface, while annealing at higher temperatures leads to S diffusion into the GaAs substrate. Even after complete desorption of the O, a small amount of S remains embedded in the GaAs lattice.

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