Electron channeling and EBIC studies of edge-supported pulling silicon sheets

1 May 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 31 (5) , 614-618
https://doi.org/10.1109/t-ed.1984.21577

Abstract

The dominant grain structure in edge-supported pulling silicon sheets has been studied by electron channeling in a scanning electron microscope. For unseeded polycrystalline silicon sheets in which equilibrium grain structures have been attained, we found that the dominant grain structure is long, narrow grains with surface normals less than twenty degrees off the [011] direction. The plane that is parallel to the growth direction and perpendicular to the surfaces for most of these grains is very close to

Keywords

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