Near-band-edge absorption and positron trapping under illumination in semi-insulating GaAs: Role of As vacancies

8 May 1995

journal article
conference paper
Published by AIP Publishing in Applied Physics Letters

Vol. 66 (19) , 2534-2536
https://doi.org/10.1063/1.113158

Abstract

We show that positron trapping at negative As vacancies revealed under illumination in bulk semi-insulating GaAs correlates with a form of near-band-edge absorption known as reverse contrast (RC). We conclude that it is the ionization of As vacancies to their negative charge state that gives rise to RC absorption.

Keywords

GALLIUM ARSENIDES
VACANCIES
POSITRON PROBES
ANNIHILATION
IONIZATION
CHARGE STATES
ABSORPTION EDGE
DEFECT STATES

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