MBE-grown InGaAs/InP BH lasers with LPE burying layers
- 21 January 1982
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 18 (2) , 91-92
- https://doi.org/10.1049/el:19820062
Abstract
CW operation at up to 60°C at 1.65 μm has been achieved in MBE-grown InGaAs/InP buried-heterostructure lasers with LPE InP burying layers. Threshold current was as low as 35 mA at room temperature. No degradation was observed after 2800 h CW operation at room temperature.Keywords
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