Surface Transport Theory

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Abstract
A theory is presented for the dependence of the galvanomagnetic parameters on the surface potential of a semiconductor. The expression for the conductivity reduces to that given by Schrieffer when the magnetic field is zero. Formal equations for the magnetoconductivity and Hall coefficient are derived. By using a constant relaxation time, and a linear space charge region potential, one can obtain closed-form expressions for the conductivity effective mobility and the Hall effective mobility. The Hall mobility is found to be 13% smaller than the conductivity mobility for large values of the surface potential.