Two-dimensional numerical analysis of normally-off type buried channel MOSFET's

1 January 1979

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/iedm.1979.189531

Abstract

Two-dimensional numerical analysis of BC(Buried Channel) MOS FETs is performed to investigate short channel behavior of this device. Mechanism of device operation, current path, maximum drain voltage and short channel effects of BC MOS FETs are examined with various device parameters. A design principles of a short channel device are obtained. A test device with a submicron channel length, fabricated according to these principles, is mentioned.

Keywords

NUMERICAL ANALYSIS
VOLTAGE
FETS
SUBSTRATES
IMPURITIES
LABORATORIES
TESTING
ELECTRON TRAPS
VERY LARGE SCALE INTEGRATION
CIRCUITS

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