Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

15 January 1996

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 68 (3) , 409-411
https://doi.org/10.1063/1.116701

Abstract

A new atomistic approach to Si device process simulation is presented. It is based on a Monte Carlo diffusion code coupled to a binary collision program. Besides diffusion, the simulation includes recombination of vacancies and interstitials, clustering and re‐emission from the clusters, and trapping of interstitials. We discuss the simulation of a typical room‐temperature implant at 40 keV, 5×10¹³ cm⁻² Si into (001)Si, followed by a high temperature (815 °C) anneal. The damage evolves into an excess of interstitials in the form of extended defects and with a total number close to the implanted dose. This result explains the success of the ‘‘+1’’ model, used to simulate transient diffusion of dopants after ion implantation. It is also in agreement with recent transmission electron microscopy observations of the number of interstitials stored in (311) defects.

Keywords

This publication has 0 references indexed in Scilit: