High-Quality p-Type a-SiC Films Obtained by Using a New Doping Gas of B(CH3)3

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Abstract
High-quality p-type a SiC films can be fabricated by using a new type of doping gas, B(CH3)3, instead of B2H6 in a photo-CVD method and a glow discharge method. The photoconductivity and doping efficiency of a-SiC films fabricated by the photo-CVD method are improved by using B(CH3)3. A reduction of tail state density and an increase in photoluminescence are also observed. Furthermore, a bandgap narrowing in highly B-doped a-SiC films fabricated by the glow discharge method can be prevented by using B(CH3)3. A conversion efficiency of 10.0% (total area efficiency of 9.02%) is obtained for a 100 cm2 integrated-type a-Si solar cell whose p-layer was fabricated by the glow discharge method with B(CH3)3.