Intermodulation nulling in GaAs MESFETs
- 28 October 1993
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 29 (22) , 1961-1962
- https://doi.org/10.1049/el:19931305
Abstract
The output conductance of gallium arsenide MESFETs, traditionally considered detrimental to device performance, is exploited to effect the cancellation of distortion. This occurs in a common-source amplifier with correct loading and provides useful gain. A technique for characterising the device is presented to allow calculation of optimum load for minimum distortion.Keywords
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