Experimental 0.1 mu m p-channel MOSFET with p/sup +/-polysilicon gate on 35 AA gate oxide
- 1 June 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 14 (6) , 304-306
- https://doi.org/10.1109/55.215206
Abstract
Very-high-transconductance 0.1 mu m surface-channel pMOSFET devices are fabricated with p/sup +/-poly gate on 35 AA-thick gate oxide. A 600 AA-deep p/sup +/ source-drain extension is used with self-aligned TiSi/sub 2/ to achieve low series resistance. The saturation transconductances, 400 mS/mm at 300 K and 500 mS/mm at 77 K, are the highest reported to date for pMOSFET devices.<>Keywords
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