Space-charge-induced optoelectronic switching in IIa diamond
- 1 August 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (3) , 260-262
- https://doi.org/10.1063/1.95164
Abstract
Experimental results are presented concerning the effect of contacts on the performance of high-voltage optoelectronic switching in insulating diamond. For high bias voltages and low intensity 222-nm, ≊7-ns pulse illumination near the cathode, the switched voltage pulse splits into two peaks. The first peak corresponds to the high-speed photoconductive response of the diamond, while the second peak (which can be delayed up to ≊200 ns later) is attributed to space-charge-induced switching in the vicinity of the cathode.Keywords
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