Hydrogen SilsesQuioxane, a high-resolution negative tone e-beam resist, investigated for its applicability in photon-based lithographies
- 31 July 2002
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 61-62, 803-809
- https://doi.org/10.1016/s0167-9317(02)00538-5
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Sub-10 nm Linewidth and Overlay Performance Achieved with a Fine-Tuned EBPG-5000 TFE Electron Beam Lithography SystemJapanese Journal of Applied Physics, 2000
- Hydrogen silsesquioxane/novolak bilayer resist for high aspect ratio nanoscale electron-beam lithographyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000
- Nano-patterning of a hydrogen silsesquioxane resist with reduced linewidth fluctuationsMicroelectronic Engineering, 1998