Interface traps in InP/InAlGaAs p-n junctions by metal organic chemical vapor deposition
- 1 June 1995
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 77 (11) , 5736-5738
- https://doi.org/10.1063/1.359217
Abstract
We have studied the deep levels in the lattice‐matched InP/(InAlGa)As heterojunction system. Five p‐n junction samples were grown by metalorganic chemical vapor deposition with varied Al composition of 0%, 16%, 36%, 45%, and 55%. A vacancy‐related deep electron trap was found at the InP/(InAlGa)As interface. This trap has less concentration in the sample with higher Al composition, and is not observed when Al composition is greater than 55%. Its activation energy within the band gap increases with the increasing Al composition. The trap can be eliminated by rapid thermal annealing at 700 °C. Current‐voltage characteristics show that this trap acts as recombination centers under forward bias condition.This publication has 12 references indexed in Scilit:
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