Superior microwave performance of InGaAs JFETs grown by MBE
- 24 May 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (11) , 734-736
- https://doi.org/10.1049/el:19900479
Abstract
The realisation of high performance InGaAs JFETs designed for InP based optoelectronic integration is reported. An optimised MBE process for the gate layer growth is presented. JFETs fabricated by using a self-aligning technique exhibit very high cut-off frequencies of fT = 28GHz and fMAX = 38GHz.Keywords
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