Nonohmic contacts for microwave devices
- 1 January 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 58 (11) , 1845-1846
- https://doi.org/10.1109/PROC.1970.8030
Abstract
Theoretical and experimental results are presented which demonstrate that the microwave properties of a nonohmic contact can be superior to those of an ohmic contact. Reactive (Schottky-barrier) contacts have been employed successfully on GaAs IMPATT diodes, where 2.0 watts, CW, have been obtained at 4.5 GHz with 10 percent efficiency.Keywords
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