Growth of GaAs on SiOx by molecular-beam epitaxy
- 15 August 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (4) , 1416-1419
- https://doi.org/10.1063/1.339855
Abstract
We have investigated the molecular-beam epitaxial growth and photoluminescence properties of GaAs on SiOx. It is seen that material with a grain size of 0.6–0.8 μm can be grown directly on the dielectric. The properties improve further when the layers are short-term annealed with a halogen lamp. Optimum grain sizes of 1.6 μm are obtained when the as-grown material is annealed at 950 °C for 10 s, and very strong luminescence is observed in the same material. Photoconductive detectors made on the overgrown GaAs show large responsivities.This publication has 3 references indexed in Scilit:
- The transport and isolation properties of polycrystalline GaAs selectively grown by molecular beam epitaxyIEEE Electron Device Letters, 1986
- A three-dimensional static RAMIEEE Electron Device Letters, 1986
- Picosecond photoconductivity in radiation-damaged silicon-on-sapphire filmsApplied Physics Letters, 1981