GaAs planar Gunn digital devices by sulphur-ion implantation
- 11 December 1975
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 11 (25-26) , 638-639
- https://doi.org/10.1049/el:19750486
Abstract
Schottky-barrier-gate Gunn-effect devices have been fabricated in n-type layers produced by sulphur-ion implantation into Cr-doped semi-insulating GaAs substrates. The device performance was examined and a satisfactory gate trigger sensitivity was obtained under d.c. bias conditions.Keywords
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