Lateral polysilicon p+–p–n+ and p+–n–n+ diodes
- 30 April 2003
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 47 (4) , 653-659
- https://doi.org/10.1016/s0038-1101(02)00323-4
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- High performance gated lateral polysilicon PIN diodesSolid-State Electronics, 2000
- High-performance thin-film transistors in large grain size polysilicon deposited by thermal decomposition of disilaneIEEE Transactions on Electron Devices, 1996
- Amorphous silicon image sensor for x-ray applicationsPublished by SPIE-Intl Soc Optical Eng ,1995
- Grain boundary states and the characteristics of lateral polysilicon diodesSolid-State Electronics, 1982
- Transport properties of polycrystalline silicon filmsJournal of Applied Physics, 1978
- Lateral Polysilicon p‐n DiodesJournal of the Electrochemical Society, 1978
- Pn junctions in polycristalline-silicon filmsSolid-State Electronics, 1972