The application of Auger depth profiling to metal-semiconductor contacts
- 1 February 1979
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 57 (1) , 115-126
- https://doi.org/10.1016/0040-6090(79)90417-6
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Particle analysis by high‐resolution scanning Auger microscopyJournal of Vacuum Science and Technology, 1977
- Auger depth profiling of interfaces in MOS and MNOS structuresJournal of Vacuum Science and Technology, 1976
- A scanning Auger electron microscope for surface studiesJournal of Physics E: Scientific Instruments, 1975
- Auger electron spectroscopy at high spatial resolution and nA primary beam currentsJournal of Vacuum Science and Technology, 1975
- A review of the theory and technology for ohmic contacts to group III–V compound semiconductorsSolid-State Electronics, 1975
- The nature of barrier height variations in alloyed Al-Si Schottky barrier diodesSolid-State Electronics, 1975
- Contacts between simple metals and atomically clean siliconJournal of Physics C: Solid State Physics, 1975
- Analysis of thin-film structures with nuclear backscattering and x-ray diffractionJournal of Vacuum Science and Technology, 1974
- Auger electron spectroscopySurface Science, 1971
- Die Analyse monomolekularer FestkörperoberflÄchenschichten mit Hilfe der SekundÄrionenemissionThe European Physical Journal A, 1970