Electron spin resonance evidence for the structure of a switching oxide trap: Long term structural change at silicon dangling bond sites in SiO2

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Abstract
We provide direct and unambiguous experimental spectroscopic evidence for the structure of a switching oxide trap in thermally grown SiO2 gate oxides on Si. Switching oxide traps can ‘‘switch’’ charge state in response to changes in the voltage applied to the gate of a metal‐oxide‐semiconductor field‐effect transistor. Electron spin resonance measurements reveal that some Eγ′ centers (a hole trapped at an oxygen vacancy) can behave as switching oxide traps.