Double heterostructure InP HBT technology for high resolution A/D converters

Publisher Website

24 August 2005

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/gaas.1994.636972

Abstract

No abstract available

Keywords

This publication has 2 references indexed in Scilit:

Stability of beryllium-doped compositionally graded and abrupt AlInAs/GaInAs heterojunction bipolar transistors
Applied Physics Letters, 1993
Fabrication, Performance, and Reliability of InP-Based HBTs
MRS Proceedings, 1993