Combined dry and wet etching techniques to form planar (011) facets in GaInAsP/InP double heterostructures

4 March 1982

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 18 (5) , 235-237
https://doi.org/10.1049/el:19820160

Abstract

Using angled reactive ion etching (RIE) and wet chemical etching (WCE), planar (011) facets have been exposed on (100) GaInAsP/InP double heterostructures for the first time. Positively sloped wall profiles observed previously for this orientation are eliminated by an initial RIE that cuts through the stop-etching (111)A plane. These (011) mirror facets are preferred over (011) for most state-of-the-art low-threshold lasers.

Keywords

PLANAR (011) FACETS
WET ETCHING
DRY ETCHING
GAINASP/INP DOUBLE HETEROSTRUCTURES
ANGLED REACTIVE ION ETCHING
INTEGRATED OPTICS
LASERS
III-V SEMICONDUCTORS
SLOPED WALL PROFILES

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