Design of GaAs MESFET Oscillator Using Large Signal S-Parameters
- 23 March 2005
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 77, 270-272
- https://doi.org/10.1109/mwsym.1977.1124431
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- GaAs microwave power FETIEEE Transactions on Electron Devices, 1976
- RF Amplifier Design with Large-Signal S-ParametersIEEE Transactions on Microwave Theory and Techniques, 1973
- Si and GaAs 0.5 μ m-gate Schottky-barrier field-effect transistorsElectronics Letters, 1973