Silicon Detector Measurements of Energy Deposition in Aluminum by Monoenergetic Electrons
- 1 January 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 17 (6) , 272-277
- https://doi.org/10.1109/tns.1970.4325805
Abstract
The energy depos ited at various depths in aluminum by incident monoenergetic electrons has been measured with a silicon-semiconductor, transmission detector. Beams of monoenergetic electrons with incident energies of 0.50, 0.75, and 1.0 MeV were directed normally on a semi-infinite slab of aluminum in which a 0.196-mm silicon detector was positioned at various depths. The pulse-height distributions recorded with the detector were converted to absorbed-energy distributions from which the probability of energy absorption per incident electron in the specific layer, as well as the absorbed energy as a function of depth in the material, could be determined. The curves of absorbed energy as a function of depth obtained for aluminum at each energy were compared to those calculated by Berger and Seltzer, employing a Monte Carlo method. Good agreement is shown between calculations and measurements.Keywords
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