Formation and annealing of isolation regions in silicon through Si+ bombardment
- 16 November 1972
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 14 (1) , 107-113
- https://doi.org/10.1002/pssa.2210140111
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Resistivity and annealing properties of implanted Si:H+Radiation Effects, 1970
- Isolation of junction devices in GaAs using proton bombardmentSolid-State Electronics, 1969
- X‐Ray Investigation of Lattice Deformations in Silicon Induced through High‐Energy Ion ImplantationPhysica Status Solidi (b), 1969
- X‐Ray Diffraction by a Crystal Containing a Translation FaultPhysica Status Solidi (b), 1969
- A Spreading Resistance Technique for Resistivity Measurements on SiliconJournal of the Electrochemical Society, 1966