Ohmic contact to p-type GaP
- 30 November 1976
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (11) , 927-929
- https://doi.org/10.1016/0038-1101(76)90104-0
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Field and thermionic-field emission in Schottky barriersPublished by Elsevier ,2002
- Electron tunneling and contact resistance of metal-silicon contact barriersPublished by Elsevier ,2002
- A review of the theory and technology for ohmic contacts to group III–V compound semiconductorsSolid-State Electronics, 1975
- Optical-coupling efficiency of GaP : N green-light-emitting diodesJournal of Applied Physics, 1973
- Contact resistances of AuGeNi, AuZn and Al to III–V compoundsSolid-State Electronics, 1972
- Diffusion of Beryllium into Gallium PhosphideJournal of Applied Physics, 1972
- Dicing Induced Damage in GaP Electroluminescent DiodesJournal of the Electrochemical Society, 1972
- Ideal GaP surface-barrier diodesElectronics Letters, 1971
- Improved ohmic contacts to n-type GaP devicesSolid-State Electronics, 1971