1.3-μm InAsP/InAlGaAs MQW lasers for high-temperature operation
- 7 April 1998
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 3284, 172-180
- https://doi.org/10.1117/12.304441
Abstract
High quality strained InAsP was grown using gas-source molecular-beam-epitaxy (GSMBE) and the band structure was determined. The conduction band discontinuity ratio of InAsP/InP heterostructure was about 0.35, contrary to the reported value of 0.75. We proposed a new InAsP/InAlGaAs material system with type-I superlattice suitable for a high performance LD for 1.3-micrometer optical subscriber systems. The crystal quality was improved by introducing an InP spacer layer and the RTA process. High characteristic temperature of 143 K was achieved with this material system.© (1998) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.Keywords
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