Ultra Thin High Quality Ta₂O₅ Gate Dielectrics Prepared by In-situ Rapid Thermal Processing

This publication has 2 references indexed in Scilit:

• Transistor characteristics with Ta/sub 2/O/sub 5/ gate dielectric
  IEEE Electron Device Letters, 1998
• Ultrathin Ta2O5 film growth by chemical vapor deposition of Ta(N(CH3)2)5 and O2 on bare and SiOxNy-passivated Si(100) for gate dielectric applications
  Journal of Vacuum Science & Technology A, 1998