Changes of the surface composition of glass during reactive and argon ion etching

1 January 1983

journal article
research article
Published by Taylor & Francis in Radiation Effects

Vol. 76 (1) , 25-28
https://doi.org/10.1080/01422448308209607

Abstract

Removal of a radioactive implant (²¹²Pb + ²¹²Bi) from the glass surface was measured during reactive (CF₄) and argon ion etching and accompanying changes in the surface composition were determined using ESCA. During reactive etch in CF₄ the formation of fluoride (Na, Ca, Mg) surface layer was observed. High etching rate at low pressure of CF₄ can be explained by the combined action of the reactive etch of the silica component and RF sputtering of the residual non-volatile fluorides.

Keywords

This publication has 2 references indexed in Scilit:

Ion-beam depth-profiling studies of leached glasses
Radiation Effects, 1982
Growth of Single Crystal Film of One-Dimensional 9, 10-Dichloroanthracene
Japanese Journal of Applied Physics, 1980