High Temperature Characteristics of Nearly 1.2 µm GaInAs/GaAs/AlGaAs Lasers
- 1 October 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (10B) , L1178
- https://doi.org/10.1143/jjap.38.l1178
Abstract
We have demonstrated a highly strained GaInAs/GaAs double quantum well laser operating at nearly 1.2 µm with AlGaAs cladding layers for the first time. Our previously reported high characteristic temperature of 150 K was improved to 202 K for a 410-µm-long broad-area GaInAs/GaAs/AlGaAs laser in the temperature range from 30°C to 70°C. The threshold current density of this laser was as low as 370 A/cm2.Keywords
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