C.W. operation of ion-implanted GaAs read-type IMPATT diodes
- 2 May 1974
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 10 (9) , 157-158
- https://doi.org/10.1049/el:19740119
Abstract
Epitaxial and ion-implantation techniques have been combined to form a high/low doping profile for GaAs Schottky-barrier Read-type IMPATT diodes. A c.w. output power of 1.1 W with 25% conversion efficiency was obtained at 11 GHz.Keywords
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