Short‐Range Order Model of GexS1−x Glasses and Utilization of This Model in Calculation of the Optical Gap and the IR 367 cm−1 Band Intensity
- 1 April 1984
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 122 (2) , 405-410
- https://doi.org/10.1002/pssb.2221220203
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Molecular vibration in Sn(Pb)GeS3 and GeS2Physics Letters A, 1983
- Broken chemical order and phase separation in GexSe1−x glassesSolid State Communications, 1983
- Optical gaps from ‘mean’ bond energy in Ge1−x S x and Ge k Sb m S n non-crystalline solidsPhilosophical Magazine Part B, 1982
- Compositional dependence of the optical gap in Ge1−xSx, Ge40−xSbxS60 and (As2S3)x(Sb2S3)1−x non-crystalline systemsJournal of Non-Crystalline Solids, 1982
- Theory of Electronic Properties of Amorphous SemiconductorsPublished by Springer Nature ,1981
- Chemistry and physics of amorphous semiconductorsJournal of Chemical Education, 1980
- Ionicity effects on defects in chalcogenide alloysSolid State Communications, 1979
- Structural interpretation of the infrared and Raman spectra of glasses in the alloy systemPhysical Review B, 1974
- Study of the optic modes ofglass by infrared and Raman spectroscopyPhysical Review B, 1974
- A relation between the binding energy and the band-gap energy in semiconductors of diamond or zinc-blende structureJournal of Physics and Chemistry of Solids, 1961