Analysis of differential gain in GaAs/AlGaAs quantum-well lasers
- 1 July 1994
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (1) , 85-91
- https://doi.org/10.1063/1.357064
Abstract
The differential gain of a quantum‐well laser is studied theoretically with use of both a parabolic band model and a valence‐band‐mixing model. In the valence‐band‐mixing model, the gain profile is derived from the multiband effective mass theory (k⋅p method) as well as the density matrix formalism. The peak gain including the band‐mixing effect is significantly reduced to 1.5–2 times when compared to the conventional parabolic band model. There is still a larger differential gain using the parabolic band model than using the band‐mixing model. The magnitudes of differential gains for these two models give the order of 10−16–10−15 cm2, which is in agreement with the experimental results. Besides, the quantum‐well thickness also influences the differential gain, which is enhanced by a thinner quantum‐well structure.This publication has 20 references indexed in Scilit:
- Analysis of differential gain in InGaAs-InGaAsP compressive and tensile strained quantum-well lasers and its application for estimation of high-speed modulation limitIEEE Journal of Quantum Electronics, 1993
- Carrier-induced energy shift in GaAs/AlGaAs multiple quantum well laser diodesIEEE Journal of Quantum Electronics, 1993
- Reduced effective differential gain in diode lasers due to confinement factor modulationIEEE Journal of Quantum Electronics, 1992
- Comparison of the theoretical and experimental differential gain in strained layer InGaAs/GaAs quantum well lasersApplied Physics Letters, 1991
- Theoretical study of differential gain in strained quantum well structuresIEEE Journal of Quantum Electronics, 1991
- Efficient band-structure calculations of strained quantum wellsPhysical Review B, 1991
- Band mixing effects on quantum well gainIEEE Journal of Quantum Electronics, 1987
- Quantum well lasers--Gain, spectra, dynamicsIEEE Journal of Quantum Electronics, 1986
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974
- Space-Charge Effects on Electron TunnelingPhysical Review B, 1966