Crystallographic facets chemically etched in GaInAsP/InP for integrated optics

20 August 1981

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 17 (17) , 582-583
https://doi.org/10.1049/el:19810410

Abstract

Vertical crystallographic (011) planes were exposed on (100) GaInAsP/InP double heterostructures (DH) by a newly developed chemical etchant and method. This method provides optically flat, mirror quality facets reproducibly and could be very attractive in integrated optics and optoelectronic devices.

Keywords

OPTOELECTRONIC DEVICES
INTEGRATED OPTICS
GAINASP/INP DOUBLE HETEROSTRUCTURES
MIRROR QUALITY FACETS
CHEMICAL ETCHING
CRYSTALLOGRAPHIC FACETS