Simulation and application of the distorted ZOLZ patterns from dislocations in Si
- 1 February 1990
- journal article
- research article
- Published by International Union of Crystallography (IUCr) in Acta Crystallographica Section A Foundations of Crystallography
- Vol. 46 (2) , 103-112
- https://doi.org/10.1107/s0108767389010275
Abstract
The previously reported distorted zeroth-order fringes in a bright-field Tanaka pattern from a dislocated region in silicon have been computer simulated and the experimental and the many-beam calculated patterns agree well. Calculations are carried out for nine distinct cases of edge, screw and 60° dislocations in a silicon crystal. The general usefulness of the distortion of the ZOLZ pattern in determining geometrical properties of a dislocation is discussed.Keywords
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