Diffusion studies of the Si δ-doped GaAs by capacitance-voltage measurement

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Abstract
Using triethylgallium and arsine, high‐quality GaAs can be grown at a relatively low substrate temperature of 500 °C by chemical beam epitaxy. Such a low temperature has the advantage of a negligible Si diffusion effect. Capacitance‐voltage (C‐V) measurements of the Si δ‐doped GaAs show extremely narrow profile widths of 22 Å at 300 K and 18 Å at 77 K, indicating a very high degree of Si spatial localization has been achieved. The subsequent annealing experiments reveal that significant Si segregation and diffusion exist at a high growth temperature of ∼600 °C, usually employed in conventional molecular‐beam epitaxy. The C‐V widths of the annealed δ‐doped structures also provide an excellent measure to determine the Si diffusion constant in GaAs.