Design, fabrication, and characterization of monolithic microwave GaAs power FET amplifiers
- 1 February 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 28 (2) , 183-190
- https://doi.org/10.1109/T-ED.1981.20308
Abstract
The design, fabrication, and characterization of three- and four-stage monolithic GaAs power FET amplifiers are described. Each of the amplifier chips measures 1 mm × 4 mm. Procedures for characterizing these monolithic amplifiers are outlined. Output powers of up to 1 W with 27-dB gain were achieved with a four-stage design near 9 GHz. The circuit topologies used were flexible enough to allow external bondwires to be used as shunt inductors for amplifier operation at C- or S-bands. An output power of 2 W with 28-dB gain and 36.6-percent power-added efficiency was achieved at 3.5 GHz, using a modified four-stage amplifier.Keywords
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