A 115 GHz Monolithic GaAs FET Oscillator

1 November 1985

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 011-013
https://doi.org/10.1109/gaas.1985.10399500

Abstract

A monolithic GaAs FET oscillator with an operating frequency as high as 115 GHz has been demonstrated. A 75 µm × 0.2 µm GaAs FET with monolithic feedback and matching elements was used for the oscillator design. The chip size is 28 mils × 35 mils × 4 mils.

Keywords

OSCILLATORS
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDE
LOGIC GATES
TUNING
MILLIMETER WAVE CIRCUITS
MILLIMETER WAVE MEASUREMENTS

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