86 GHz static and 110 GHz dynamic frequency dividers in SiGe bipolar technology
- 27 August 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1067-1070
- https://doi.org/10.1109/mwsym.2003.1212553
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- 100+ GHz static divide-by-2 circuit in InP-DHBT technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 71.8 GHz static frequency divider in a SiGe bipolar technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
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- Optimization of characteristics related to the emitter-base junction in self-aligned SEG SiGe HBTs and their application in 72-GHz-static/92-GHz-dynamic frequency dividersIEEE Transactions on Electron Devices, 2002
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