Evaluation of currents in the fA range

21 June 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (13) , 844-846
https://doi.org/10.1049/el:19900553

Abstract

A method allowing the determination of very low currents is presented. It consists in the association of an amplification element to a leaky device on the same silicon chip. A theoretical approach is given, the possibilities of this method are deduced, and experimental results are reported and discussed.

Keywords

THEORETICAL APPROACH
IN SITU AMPLIFIER
EXPERIMENTAL RESULTS
FEMTOAMPERE CURRENT MEASUREMENT
LEAKAGE CURRENTS
LEAKY DEVICE
AMPLIFICATION ELEMENT
MOS ICS
MEASUREMENT OF VERY LOW CURRENTS

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