Preparation of cubic boron nitride films by low pressure inductively coupled plasma enhanced chemical vapor deposition
- 14 February 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (7) , 851-853
- https://doi.org/10.1063/1.111001
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Review of inductively coupled plasmas for plasma processingPlasma Sources Science and Technology, 1992
- High-density plasma mode of an inductively coupled radio frequency dischargeJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Surface recombination velocity and lifetime in InPSolid-State Electronics, 1991
- Formation of cubic boron nitride films by arc-like plasma-enhanced ion plating methodJournal of Vacuum Science & Technology A, 1990
- Preparation of Cubic Boron Nitride Films by RF SputteringJapanese Journal of Applied Physics, 1990
- Preparation of cubic boron nitride film by activated reactive evaporation with a gas activation nozzleJournal of Vacuum Science & Technology A, 1987
- Synthesis of cubic boron nitride films by activated reactive evaporation of H3BO3Thin Solid Films, 1985
- Formation of Cubic Boron Nitride Films by Boron Evaporation and Nitrogen Ion Beam BombardmentJapanese Journal of Applied Physics, 1983
- Synthesis of the Cubic Form of Boron NitrideThe Journal of Chemical Physics, 1961
- LXVI.On the origin of the electrodeless dischargeJournal of Computers in Education, 1929