Formation of low defect density SiOx films for Josephson integrated circuits
- 15 August 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (4) , 429-430
- https://doi.org/10.1063/1.96134
Abstract
SiOx films deposited by evaporation under oxygen atmosphere were investigated to form low defect density insulating layers in Josephson integrated circuits. The defect density is high in SiOx films deposited under an oxygen pressure of less than 1.33×10−3 Pa, but it decreases greatly in films deposited under higher oxygen pressure. This can be explained by the presence or absence of elemental Si in the films. Elemental Si is present in films deposited under low oxygen pressure, but not in films deposited under higher oxygen pressure. The insulating characteristics of a SiOx film deposited under an oxygen pressure of 1.33×10−2 Pa are excellent.Keywords
This publication has 4 references indexed in Scilit:
- Fabrication Process for Josephson Integrated CircuitsIBM Journal of Research and Development, 1980
- Silicon valence in SiO films studied by X-ray emissionSolid State Communications, 1964
- Stress Anisotropy in Silicon Oxide FilmsJournal of Applied Physics, 1963
- Properties of Evaporated Thin Films of SiOJournal of the Electrochemical Society, 1963