Schottky rectifiers on silicon using high barriers
- 30 April 1983
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 26 (4) , 295-297
- https://doi.org/10.1016/0038-1101(83)90126-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- A Comparison Between the Diffusion Model and the Combined Diffusion-Thermionic-Emission Model for MS-Junctions by Two-Carrier Numerical ComputationsPhysica Scripta, 1981
- A modified forward I-V plot for Schottky diodes with high series resistanceJournal of Applied Physics, 1979
- Ohmic contacts on semiconductors using indium amalgamJournal of Physics D: Applied Physics, 1972
- Recombination velocity effects on current diffusion and imref in schottky barriersSolid-State Electronics, 1971