Oxidation of n-Type Silicon in the 10–1400-Å Oxide Thickness Range

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Abstract
The oxidation of the (111) surface of n‐type silicon in oxygen and in steam has been followed by ellipsometry in the film thickness region of 10 to about 1400 Å. For very thin films (300 Å. Oxidation between 30 and about 60 Å follows a logarithmictime relationship. As the film thickens above this the rate accelerates then decreases and the data do not follow any of the usual thickness‐vs‐time relationships. As a first approximation the average rate of oxidation (up to about 500 Å) is proportional to the square root of the oxygen partial pressure. Between about 890 and 1100°C the activation energy proves to be about 22 kcal/mole.

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