Low coherence reflectometry and spectral analysis for detection of gain anomalies in semiconductor lasers

Abstract
Commercial semiconductor lasers have been analysed by low coherence reflectrometry and by spectral analysis to reveal the location and relative strength of internal gain anomalies. The authors report the first observation of a correlation between the longitudinal co-ordinates of gain anomalies observed by low coherence reflectrometry and by independent mathematical analysis of the laser spectra.

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