Role of satellite valleys in ionisation rate enhancement in multiple quantum well avalanche photodiodes

2 August 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (16) , 1311-1313
https://doi.org/10.1049/el:19900843

Abstract

The enhancement of the electron ionisation rate in multiple quantum well avalanche photodiodes is determined by the band offsets in the satellite valleys rather than the Γ valley as previously assumed for semiconductors where the threshold field for the Gunn effect is less than that for impact ionisation. Monte Carlo calculations in a model GaAs/Al_0.45Ga_0.55As heterostructure show no enhancement caused by the band offsets.

Keywords

IONISATION RATE ENHANCEMENT
GUNN EFFECT THRESHOLD FIELD
SATELLITE VALLEYS ROLE
BAND OFFSETS
APD
MULTIPLE QUANTUM WELL AVALANCHE PHOTODIODES
MONTE CARLO CALCULATIONS
GAAS-AL0.45GA0.55AS
ELECTRON IONISATION RATE
IMPACT IONISATION THRESHOLD FIELD
SEMICONDUCTORS

This publication has 0 references indexed in Scilit: