Grazing-incidence small-angle scattering measurement of Ge islands capped with a Si layer
- 16 September 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (13) , 2358-2360
- https://doi.org/10.1063/1.1509112
Abstract
Grazing-incidence small-angle scattering (GI-SAXS) technique was applied to self-organized Ge islands capped with Si. The average size and height as well as the average distance between Ge islands were obtained. The present results demonstrate that GI-SAXS is a useful tool to examine the structure of self-organized semiconducting nanodots even if they are covered with a cap layer, and a simple kinematical approach can be safely used under some conditions.Keywords
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