Slope angle influence on silicon doping in AlGaAs/GaAs MBE-grown on stepped surface of (100) GaAs substrate
- 2 January 1987
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 23 (1) , 35-36
- https://doi.org/10.1049/el:19870026
Abstract
Formation of a series of lateral p-n junctions has been observed in molecular-beam-epitaxial Si-doped AlGaAs/GaAs grown on a graded-step surface of a (100) GaAs substrate. The lateral p-n junction has been found to be formed in a region where a slope angle θ of the graded-step surface changes gradually; the conductivity is n-type for 0° < θ < 21° but it converts to p-type for θ > 31°. A critical angle in the conductivity reversal has been first observed on a single substrate.Keywords
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